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  1. product pro?le 1.1 general description npn/pnp transistor pair connected as push-pull driver in a sot457 (sc-74) surface-mounted device (smd) plastic package. 1.2 features n switching transistors in push-pull con?guration n application-optimized pinout n space-saving solution n internal connections to minimize layout effort n reduces component count 1.3 applications n mosfet driver n power bipolar transistor driver n output current booster for operational ampli?er 1.4 quick reference data PMD2001D mosfet driver rev. 01 25 september 2006 product data sheet table 1. quick reference data symbol parameter conditions min typ max unit per transistor; for the pnp transistor with negative polarity v ceo collector-emitter voltage open base - - 40 v i c collector current - - 0.6 a i cm peak collector current single pulse; t p 1ms --1a 4 .com u datasheet 4 .com u datasheet
PMD2001D_1 ? koninklijke philips electronics n.v. 2006. all rights reserved. product data sheet rev. 01 25 september 2006 2 of 15 philips semiconductors PMD2001D mosfet driver 2. pinning information 3. ordering information 4. marking table 2. pinning pin description simpli?ed outline symbol 1 base tr1, tr2 2 collector tr2 3 collector tr2 4 emitter tr1, tr2 5 collector tr1 6 collector tr1 13 2 4 5 6 006aaa659 3 2 1 4 5 6 tr1 tr2 table 3. ordering information type number package name description version PMD2001D sc-74 plastic surface-mounted package (tsop6); 6 leads sot457 table 4. marking codes type number marking code PMD2001D 9e 4 .com u datasheet 4 .com u datasheet
PMD2001D_1 ? koninklijke philips electronics n.v. 2006. all rights reserved. product data sheet rev. 01 25 september 2006 3 of 15 philips semiconductors PMD2001D mosfet driver 5. limiting values [1] device mounted on an fr4 printed-circuit board (pcb), single-sided copper, tin-plated and standard footprint. [2] device mounted on an fr4 pcb, single-sided copper, tin-plated, mounting pad for collector 1 cm 2 . [3] device mounted on a ceramic pcb, al 2 o 3 , standard footprint. table 5. limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit per transistor; for the pnp transistor with negative polarity v cbo collector-base voltage open emitter - 40 v v ceo collector-emitter voltage open base - 40 v i c collector current - 0.6 a i cm peak collector current single pulse; t p 1ms -1a i bm peak base current - 0.1 a single pulse; t p 1ms - 0.2 a per device p tot total power dissipation t amb 25 c [1] - 320 mw [2] - 400 mw [3] - 540 mw t j junction temperature - 150 c t amb ambient temperature - 65 +150 c t stg storage temperature - 65 +150 c (1) ceramic pcb, al 2 o 3 , standard footprint (2) fr4 pcb, mounting pad for collector 1 cm 2 (3) fr4 pcb, standard footprint fig 1. power derating curves t amb ( c) - 75 175 125 25 75 - 25 006aaa768 200 400 600 p tot (mw) 0 (1) (2) (3) 4 .com u datasheet 4 .com u datasheet
PMD2001D_1 ? koninklijke philips electronics n.v. 2006. all rights reserved. product data sheet rev. 01 25 september 2006 4 of 15 philips semiconductors PMD2001D mosfet driver 6. thermal characteristics [1] device mounted on an fr4 pcb, single-sided copper, tin-plated and standard footprint. [2] device mounted on an fr4 pcb, single-sided copper, tin-plated, mounting pad for collector 1 cm 2 . [3] device mounted on a ceramic pcb, al 2 o 3 , standard footprint. table 6. thermal characteristics symbol parameter conditions min typ max unit r th(j-a) thermal resistance from junction to ambient in free air [1] - - 390 k/w [2] - - 315 k/w [3] - - 230 k/w fr4 pcb, standard footprint fig 2. transient thermal impedance from junction to ambient as a function of pulse duration; typical values 006aaa769 10 - 5 10 10 - 2 10 - 4 10 2 10 - 1 t p (s) 10 - 3 10 3 1 10 2 10 10 3 z th(j-a) (k/w) 1 duty cycle = 0.05 0.02 0.01 0 0.1 1 0.75 0.5 0.33 0.2 4 .com u datasheet 4 .com u datasheet
PMD2001D_1 ? koninklijke philips electronics n.v. 2006. all rights reserved. product data sheet rev. 01 25 september 2006 5 of 15 philips semiconductors PMD2001D mosfet driver fr4 pcb, mounting pad for collector 1 cm 2 fig 3. transient thermal impedance from junction to ambient as a function of pulse duration; typical values ceramic pcb, al 2 o 3 , standard footprint fig 4. transient thermal impedance from junction to ambient as a function of pulse duration; typical values 006aaa770 10 - 5 10 10 - 2 10 - 4 10 2 10 - 1 t p (s) 10 - 3 10 3 1 10 2 10 10 3 z th(j-a) (k/w) 1 1 duty cycle = 0.05 0.02 0.01 0 0.1 0.75 0.5 0.33 0.2 006aaa771 10 - 5 10 10 - 2 10 - 4 10 2 10 - 1 t p (s) 10 - 3 10 3 1 10 2 10 10 3 z th(j-a) (k/w) 1 1 duty cycle = 0.05 0.02 0 0.1 0.75 0.33 0.5 0.2 0.01 4 .com u datasheet 4 .com u datasheet
PMD2001D_1 ? koninklijke philips electronics n.v. 2006. all rights reserved. product data sheet rev. 01 25 september 2006 6 of 15 philips semiconductors PMD2001D mosfet driver 7. characteristics [1] pulse test: t p 300 m s; d 0.02. table 7. characteristics t amb =25 c unless otherwise speci?ed. symbol parameter conditions min typ max unit per npn transistor i cbo collector-base cut-off current v cb =40v; i e =0a --10na v cb =40v; i e =0a; t j = 150 c --10 m a h fe dc current gain v ce =5v; i c = 1 ma 100 210 - v ce =5v; i c = 200 ma 100 170 300 v ce =5v; i c = 500 ma [1] 50 100 - v cesat collector-emitter saturation voltage i c = 200 ma; i b = 20 ma - 150 250 mv i c = 500 ma; i b =50ma [1] - 300 500 mv v besat base-emitter saturation voltage i c = 200 ma; i b = 20 ma - 0.86 1 v i c = 500 ma; i b =50ma [1] - 0.95 1.1 v per pnp transistor i cbo collector-base cut-off current v cb = - 40 v; i e =0a - - - 10 na v cb = - 40 v; i e =0a; t j = 150 c -- - 10 m a h fe dc current gain v ce = - 5 v; i c = - 1 ma 100 180 - v ce = - 5 v; i c = - 200 ma 80 125 300 v ce = - 5 v; i c = - 500 ma [1] 50 80 - v cesat collector-emitter saturation voltage i c = - 200 ma; i b = - 20 ma - - 130 - 250 mv i c = - 500 ma; i b = - 50 ma [1] - - 280 - 500 mv v besat base-emitter saturation voltage i c = - 200 ma; i b = - 20 ma - - 0.87 - 1v i c = - 500 ma; i b = - 50 ma [1] - - 0.98 - 1.1 v per device t d delay time i c = 0.15 a; v i = 7.5 v - 3 - ns t r rise time - 3 - ns t on turn-on time - 6 - ns t s storage time - 2 - ns t f fall time - 3 - ns t off turn-off time - 5 - ns 4 .com u datasheet 4 .com u datasheet
PMD2001D_1 ? koninklijke philips electronics n.v. 2006. all rights reserved. product data sheet rev. 01 25 september 2006 7 of 15 philips semiconductors PMD2001D mosfet driver v ce =5v (1) t amb = 150 c (2) t amb = 125 c (3) t amb = 100 c (4) t amb =25 c (5) t amb = - 55 c t amb =25 c fig 5. tr1 (npn): dc current gain as a function of collector current; typical values fig 6. tr1 (npn): collector current as a function of collector-emitter voltage; typical values v ce =5v (1) t amb = - 55 c (2) t amb =25 c (3) t amb = 100 c i c /i b =20 (1) t amb = - 55 c (2) t amb =25 c (3) t amb = 100 c fig 7. tr1 (npn): base-emitter voltage as a function of collector current; typical values fig 8. tr1 (npn): base-emitter saturation voltage as a function of collector current; typical values 006aaa772 400 200 600 800 h fe 0 i c (ma) 10 - 1 10 3 110 2 10 (2) (3) (1) (4) (5) v ce (v) 010 8 46 2 006aaa777 0.4 0.8 1.2 i c (a) 0 27 24 21 12 15 18 9 6 3 ib (ma) = 30 006aaa773 0.6 0.8 0.4 1.0 1.2 v be (v) 0.2 i c (ma) 10 - 1 10 3 10 2 110 (1) (3) (2) 006aaa776 0.6 0.8 0.4 1.0 1.2 v besat (v) 0.2 i c (ma) 10 - 1 10 3 110 2 10 (1) (2) (3) 4 .com u datasheet 4 .com u datasheet
PMD2001D_1 ? koninklijke philips electronics n.v. 2006. all rights reserved. product data sheet rev. 01 25 september 2006 8 of 15 philips semiconductors PMD2001D mosfet driver i c /i b =20 (1) t amb = 100 c (2) t amb =25 c (3) t amb = - 55 c t amb =25 c (1) i c /i b = 100 (2) i c /i b =50 (3) i c /i b =10 fig 9. tr1 (npn): collector-emitter saturation voltage as a function of collector current; typical values fig 10. tr1 (npn): collector-emitter saturation voltage as a function of collector current; typical values 006aaa774 i c (ma) 10 - 1 10 3 110 2 10 10 - 1 1 v cesat (v) 10 - 2 (1) (2) (3) 006aaa775 i c (ma) 10 - 1 10 3 110 2 10 10 - 1 1 v cesat (v) 10 - 2 (1) (2) (3) 4 .com u datasheet 4 .com u datasheet
PMD2001D_1 ? koninklijke philips electronics n.v. 2006. all rights reserved. product data sheet rev. 01 25 september 2006 9 of 15 philips semiconductors PMD2001D mosfet driver v ce = - 5v (1) t amb = 100 c (2) t amb =25 c (3) t amb = - 55 c t amb =25 c fig 11. tr2 (pnp): dc current gain as a function of collector current; typical values fig 12. tr2 (pnp): collector current as a function of collector-emitter voltage; typical values v ce = - 5v (1) t amb = - 55 c (2) t amb =25 c (3) t amb = 100 c i c /i b =20 (1) t amb = - 55 c (2) t amb =25 c (3) t amb = 100 c fig 13. tr2 (pnp): base-emitter voltage as a function of collector current; typical values fig 14. tr2 (pnp): base-emitter saturation voltage as a function of collector current; typical values 006aaa778 100 200 300 h fe 0 i c (ma) - 10 - 1 - 10 3 - 10 2 - 1 - 10 (1) (2) (3) v ce (v) 0 - 10 - 8 - 4 - 6 - 2 006aaa783 - 0.4 - 0.8 - 1.2 i c (a) 0 ib (ma) = - 25 - 22.5 - 20 - 17.5 - 15 - 10 - 7.5 - 5 - 2.5 - 12.5 006aaa779 - 0.6 - 0.8 - 0.4 - 1.0 - 1.2 v be (v) - 0.2 i c (ma) - 10 - 1 - 10 3 - 10 2 - 1 - 10 (1) (2) (3) 006aaa782 - 0.6 - 0.8 - 0.4 - 1.0 - 1.2 v besat (v) - 0.2 i c (ma) - 10 - 1 - 10 3 - 1 - 10 2 - 10 (1) (2) (3) 4 .com u datasheet 4 .com u datasheet
PMD2001D_1 ? koninklijke philips electronics n.v. 2006. all rights reserved. product data sheet rev. 01 25 september 2006 10 of 15 philips semiconductors PMD2001D mosfet driver 8. test information i c /i b =20 (1) t amb = 100 c (2) t amb =25 c (3) t amb = - 55 c t amb =25 c (1) i c /i b = 100 (2) i c /i b =50 (3) i c /i b =10 fig 15. tr2 (pnp): collector-emitter saturation voltage as a function of collector current; typical values fig 16. tr2 (pnp): collector-emitter saturation voltage as a function of collector current; typical values 006aaa780 i c (ma) - 10 - 1 - 10 3 - 1 - 10 2 - 10 - 10 - 1 - 1 v cesat (v) - 10 - 2 (1) (2) (3) 006aaa781 - 1 - 10 - 2 i c (ma) - 10 - 1 - 10 3 - 1 - 10 2 - 10 - 10 - 1 (1) (2) (3) v cesat (v) i c = 0.15 a; v i = 7.5 v; r1 = 56 w ; r e =47 w fig 17. test circuit for switching times 006aaa858 450 w (probe) v i r1 tr1 tr2 r e v cc v o oscilloscope oscilloscope 450 w (probe) dut 4 .com u datasheet 4 .com u datasheet
PMD2001D_1 ? koninklijke philips electronics n.v. 2006. all rights reserved. product data sheet rev. 01 25 september 2006 11 of 15 philips semiconductors PMD2001D mosfet driver 9. package outline 10. packing information [1] for further information and the availability of packing methods, see section 14 . [2] t1: normal taping [3] t2: reverse taping fig 18. package outline sot457 (sc-74) 04-11-08 dimensions in mm 3.0 2.5 1.7 1.3 3.1 2.7 pin 1 index 1.9 0.26 0.10 0.40 0.25 0.95 1.1 0.9 0.6 0.2 13 2 4 5 6 table 8. packing methods the indicated -xxx are the last three digits of the 12nc ordering code. [1] type number package description packing quantity 3000 10000 PMD2001D sot457 4 mm pitch, 8 mm tape and reel; t1 [2] -115 -135 4 mm pitch, 8 mm tape and reel; t2 [3] -125 -165 4 .com u datasheet 4 .com u datasheet
PMD2001D_1 ? koninklijke philips electronics n.v. 2006. all rights reserved. product data sheet rev. 01 25 september 2006 12 of 15 philips semiconductors PMD2001D mosfet driver 11. soldering dimensions in mm fig 19. re?ow soldering footprint sot457 (sc-74) dimensions in mm fig 20. wave soldering footprint sot457 (sc-74) solder lands solder resist occupied area solder paste 0.95 2.825 0.45 0.55 1.60 1.95 3.45 1.70 3.10 3.20 3.30 msc422 1.40 4.30 5.30 0.45 msc423 1.45 4.45 5.05 solder lands solder resist occupied area solder paste 4 .com u datasheet 4 .com u datasheet
PMD2001D_1 ? koninklijke philips electronics n.v. 2006. all rights reserved. product data sheet rev. 01 25 september 2006 13 of 15 philips semiconductors PMD2001D mosfet driver 12. revision history table 9. revision history document id release date data sheet status change notice supersedes PMD2001D_1 20060925 product data sheet - - 4 .com u datasheet 4 .com u datasheet
PMD2001D_1 ? koninklijke philips electronics n.v. 2006. all rights reserved. product data sheet rev. 01 25 september 2006 14 of 15 philips semiconductors PMD2001D mosfet driver 13. legal information 13.1 data sheet status [1] please consult the most recently issued document before initiating or completing a design. [2] the term short data sheet is explained in section de?nitions. [3] the product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple dev ices. the latest product status information is available on the internet at url http://www .semiconductors .philips .com. 13.2 de?nitions draft the document is a draft version only. the content is still under internal review and subject to formal approval, which may result in modi?cations or additions. philips semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. short data sheet a short data sheet is an extract from a full data sheet with the same product type number(s) and title. a short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. for detailed and full information see the relevant full data sheet, which is available on request via the local philips semiconductors sales of?ce. in case of any inconsistency or con?ict with the short data sheet, the full data sheet shall prevail. 13.3 disclaimers general information in this document is believed to be accurate and reliable. however, philips semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. right to make changes philips semiconductors reserves the right to make changes to information published in this document, including without limitation speci?cations and product descriptions, at any time and without notice. this document supersedes and replaces all information supplied prior to the publication hereof. suitability for use philips semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of a philips semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. philips semiconductors accepts no liability for inclusion and/or use of philips semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customers own risk. applications applications that are described herein for any of these products are for illustrative purposes only. philips semiconductors makes no representation or warranty that such applications will be suitable for the speci?ed use without further testing or modi?cation. limiting values stress above one or more limiting values (as de?ned in the absolute maximum ratings system of iec 60134) may cause permanent damage to the device. limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the characteristics sections of this document is not implied. exposure to limiting values for extended periods may affect device reliability. terms and conditions of sale philips semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www .semiconductors .philips .com/pro? le/ter ms , including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by philips semiconductors. in case of any inconsistency or con?ict between information in this document and such terms and conditions, the latter will prevail. no offer to sell or license nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 13.4 trademarks notice: all referenced brands, product names, service names and trademarks are the property of their respective owners. 14. contact information for additional information, please visit: http://www.semiconductors.philips.com for sales of?ce addresses, send an email to: sales.addresses@www.semiconductors.philips.com document status [1] [2] product status [3] de?nition objective [short] data sheet development this document contains data from the objective speci?cation for product development. preliminary [short] data sheet quali?cation this document contains data from the preliminary speci?cation. product [short] data sheet production this document contains the product speci?cation. 4 .com u datasheet 4 .com u datasheet
philips semiconductors PMD2001D mosfet driver ? koninklijke philips electronics n.v. 2006. all rights reserved. for more information, please visit: http://www.semiconductors.philips.com. for sales office addresses, email to: sales.addresses@www.semiconductors.philips.com. date of release: 25 september 2006 document identifier: PMD2001D_1 please be aware that important notices concerning this document and the product(s) described herein, have been included in section legal information. 15. contents 1 product pro?le . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 general description. . . . . . . . . . . . . . . . . . . . . . 1 1.2 features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 quick reference data. . . . . . . . . . . . . . . . . . . . . 1 2 pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 6 thermal characteristics. . . . . . . . . . . . . . . . . . . 4 7 characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 6 8 test information . . . . . . . . . . . . . . . . . . . . . . . . 10 9 package outline . . . . . . . . . . . . . . . . . . . . . . . . 11 10 packing information. . . . . . . . . . . . . . . . . . . . . 11 11 soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 12 revision history . . . . . . . . . . . . . . . . . . . . . . . . 13 13 legal information. . . . . . . . . . . . . . . . . . . . . . . 14 13.1 data sheet status . . . . . . . . . . . . . . . . . . . . . . 14 13.2 de?nitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 13.3 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 13.4 trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 14 contact information. . . . . . . . . . . . . . . . . . . . . 14 15 contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 4 .com u datasheet 4 .com u datasheet


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